SEM/EDS/EBSD study of the behaviour of Ge, Mo and Al impurities in complex-doped crystals of higher manganese silicide

The structure of Al, Ge, Mo doped higher manganese silicides (HMS) grown by the Bridgman technique has been studied by SEM/EDS/EBSD methods. It is shown that dopants are partially integrated into the HMS crystal lattice. Some inclusions with sizes of 0.1-100 μm and different shapes (round, irregular, elongated) are formed. The precipitation of tetragonal MoSi2 and Si-Ge solid-solution has been observed. MoSi2 inclusions hundreds of microns in size form a multicomponent texture. The inclusions of Si-Ge solid solution have an irregular shape. The orientation relationship between these inclusions and matrix crystal is determined.