Low-temperature silicon amorphous and crystalline film formation by laser chemical vapor deposition

Laser chemical vapor deposition (LCVD) method was used for silicon films formation. Results on Raman scattering and x-ray induced photoelectron spectroscopy (XPS) of these polycrystalline and amorphous films are presented. The same LCVD methods for the case of quasi-resonant molecules were studied too. Theoretical criteria for nonthermal and thermal reactions in laser fields are given. The frequency dependence of laser chemical reaction ignition threshold was experimentally registered for the silicon tetrafluoride decomposition reaction in carbon-dioxide-laser field. It was proved that the laser radiation intensity needed for maintaining the reaction is substantially lower than the threshold ignition intensity.