Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring

Abstract This paper proposes a study on the possibility of using measurable electrical quantities in a DC/DC converter to infer the state of health of active and passive components. We worked out the dependence of several features of the output voltage waveform on the parametric drift of the main switch, the diode, the tank inductor, and the output capacitor. The goal is to use these findings for the implementation of machine-learning algorithms for indirect condition monitoring, i.e., not relying on the direct measurement of the critical parameters. The case study is a buck converter based on silicon-carbide MOSFETs. Simulation results show the sensitivity of various output voltage signal features to these parameters and also their correlations, and as a result, the most appropriate features for the condition monitoring purpose. The same approach can be implemented for other converters.

[1]  R. Ouaida,et al.  Gate Oxide Degradation of SiC MOSFET in Switching Conditions , 2014, IEEE Electron Device Letters.

[2]  J. Lutz,et al.  Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .

[3]  J. Rabkowski,et al.  Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated , 2012, IEEE Industrial Electronics Magazine.

[4]  S. Holt,et al.  Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions , 2016, IEEE Transactions on Power Electronics.

[5]  Josef Lutz,et al.  Semiconductor Power Devices , 2011 .

[6]  Thomas Santini,et al.  Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications , 2013, 2013 IEEE ECCE Asia Downunder.

[7]  T. V. Thang,et al.  Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation , 2015, IEEE Transactions on Power Electronics.

[8]  Didier Theilliol,et al.  A Failure-Detection Strategy for IGBT Based on Gate-Voltage Behavior Applied to a Motor Drive System , 2011, IEEE Transactions on Industrial Electronics.

[9]  J. Suehle,et al.  Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments , 2010, IEEE Transactions on Device and Materials Reliability.

[10]  Yantao Song,et al.  Survey on Reliability of Power Electronic Systems , 2013, IEEE Transactions on Power Electronics.

[11]  Suresh Perinpanayagam,et al.  A Brief Overview of SiC MOSFET Failure Modes and Design Reliability , 2017 .

[12]  B. Jayant Baliga,et al.  Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation , 2019, IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society.

[13]  Dawei Xiang,et al.  An Industry-Based Survey of Reliability in Power Electronic Converters , 2011, IEEE Transactions on Industry Applications.

[14]  Amir Sajjad Bahman,et al.  Survey on Generative and Discriminative Fault Detection Approaches with Focus on SiC Components , 2020 .

[15]  Jens Lienig,et al.  Fundamentals of Electronic Systems Design , 2017 .

[16]  Frede Blaabjerg,et al.  A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis , 2017, Microelectron. Reliab..

[17]  Frede Blaabjerg,et al.  Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules , 2017, Microelectron. Reliab..

[18]  Frede Blaabjerg,et al.  Review of Health Prognostics and Condition Monitoring of Electronic Components , 2020, IEEE Access.

[19]  Frede Blaabjerg,et al.  Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems , 2015, IEEE Transactions on Power Electronics.