Versatile bilayer resist for laser lithography at 405 nm on glass substrates

Abstract. We describe a simple bilayer photoresist that is particularly well suited for laser lithography at an exposure wavelength of 405 nm on glass substrates, which are often used for the fabrication of binary diffractive optics and computer-generated holograms. The resist consists of a poly-dimethyl glutarimide (PMGI) bottom layer that is used as an antireflection coating between a glass substrate and a positive or negative photoresist. The optical properties of the PMGI layer at 405 nm result in excellent suppression of reflections into the photoresist and good process latitude.

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