论文信息 - Impact of ULK restoration techniques on propagation performance for interconnects of the 45 nm technology node and below

Impact of ULK restoration techniques on propagation performance for interconnects of the 45 nm technology node and below

The development of advanced ICs architectures for the 45 nm technology node and beyond faces several integration and performance issues. Porous dielectrics are very prone to degradation during process flow, potentially compromising signal integrity. Specific processes such as annealing, restoration treatments, and pore-sealing by liner deposition are considered as potential solutions. Their utility and impact on propagation performance is investigated through both RF measurements and electromagnetic simulations.

[1] A. Farcy,et al. Sidewall restoration of porous ultra low-k dielectrics for sub-45nm technology nodes , 2007 .

[2] N. Jourdan,et al. Robust integration of an ULK SiOCH dielectric (k=2.3) for high performance 32nm node BEOL , 2007, 2007 IEEE International Interconnect Technology Conferencee.

[3] G. Lo,et al. Study of Ta-barrier and pore sealing dielectric layer interaction for enhanced barrier performance of Cu/ultralow /spl kappa/(/spl kappa/<2.2) interconnects , 2005, IEEE Electron Device Letters.

[4] R. Cheung,et al. Novel post electroplating in-situ rapid annealing process for advanced copper interconnect application , 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).