Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs

Several unified low-frequency noise models for MOSFETs, developed in the past, combine carrier number fluctuations and correlated mobility fluctuations. The characteristics of the physical parameters in these models are reevaluated here, considering the channel carrier density and their displacement from the oxide–semiconductor interface with applied gate and body bias. The lowering of the oxide–semiconductor tunneling barrier with increasing gate bias is also considered for noise calculations. Experimental results are reported for n-MOSFETs to compare with the calculated low-frequency noise considering these effects. Including the oxide–semiconductor barrier height lowering and average displacement of channel carriers in the conventional correlated lowfrequency noise model, the bias and geometry dependence of 1/f noise is explained quantitatively. � 2005 Elsevier Ltd. All rights reserved.

[1]  L.K.J. Vandamme,et al.  1/f; noise model for MOSTs biased in nonohmic region , 1980 .

[2]  F. Stern.  Self-Consistent Results for n -Type Si Inversion Layers , 1972 .

[3]  W. Muth.  Matrix method for latch-up free demonstration in a triple-well bulk-silicon technology , 1991 .

[4]  R. Kingston,et al.  Semiconductor surface physics , 1957 .

[5]  R. Clevers,et al.  Volume and temperature dependence of the 1f noise parameter α in Si , 1989 .

[6]  M. Stegherr,et al.  Flicker noise in hot electron degraded short channel MOSFETs , 1984 .

[7]  F. Berz,et al.  Theory of low frequency noise in Si MOST's , 1970 .

[8]  M. White,et al.  Observation of near-interface oxide traps with the charge-pumping technique , 1992, IEEE Electron Device Letters.

[9]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[10]  F. N. Hooge,et al.  1/f noise , 1976 .

[11]  E. Simoen,et al.  Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors , 1993 .

[12]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[13]  D. Fleetwood,et al.  Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .

[14]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[15]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[16]  J. R. Brews,et al.  Theory of the carrier‐density fluctuations in an IGFET near threshold , 1975 .

[17]  D. Fleetwood.  'Border traps' in MOS devices , 1992 .

[18]  Robert W. Dutton,et al.  Accurate modeling of Coulombic scattering, and its impact on scaled MOSFETs , 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

[19]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[20]  Shinichi Takagi,et al.  A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[21]  H. Fu,et al.  Theory and experiments on surface 1/f noise , 1972 .

[22]  Renuka P. Jindal,et al.  Phonon fluctuation model for flicker noise in elemental semiconductors , 1981 .

[23]  Tso-Ping Ma,et al.  Effect of radiation-induced interface traps on 1/f noise in MOSFET's , 1992 .

[24]  L.K.J. Vandamme,et al.  Model for 1/f; noise in MOS transistors biased in the linear region , 1980 .

[25]  H. Wagemann,et al.  Investigation and modeling the surface mobility of MOSFETs from -25 to +150 degrees C , 1988 .

[26]  Yuhua Cheng,et al.  Flicker noise characteristics of advanced MOS technologies , 1988, Technical Digest., International Electron Devices Meeting.

[27]  H. E. Boesch,et al.  Time-dependent degradation of MOSFET channel mobility following pulsed irradiation , 1989 .

[28]  Dietrich Wolf,et al.  Noise in physical systems , 1978 .

[29]  Chih-Tang Sah,et al.  Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges , 1972 .

[30]  John H. Scofield,et al.  Physical basis for nondestructive tests of MOS radiation hardness , 1991 .

[31]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[32]  F. Hooge,et al.  Lattice scattering causes 1/ƒ noise , 1978 .

[33]  B. Dierickx,et al.  Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K , 1993 .

[34]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .

[35]  J. Plummer,et al.  Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .

[36]  Yasuyuki Ohkura,et al.  Quantum effects in Si n-MOS inversion layer at high substrate concentration , 1990 .

[37]  John H. Scofield,et al.  Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors , 1994 .

[38]  F. Newcomer,et al.  Noise measurement results of a radiation hardened CMOS 1.2 μm P-well process☆ , 1992 .

[39]  T. H. Ning,et al.  The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface , 1972 .

[40]  M. Lundstrom.  Fundamentals of carrier transport , 1990 .

[41]  E. P. Vandamme,et al.  Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET , 1994 .