Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography

[1]  Albert T. Macrander,et al.  Sequential x-ray diffraction topography at 1-BM x-ray optics testing beamline at the advanced photon source , 2016 .

[2]  K. Finkelstein,et al.  Rocking curve imaging for diamond radiator crystal selection , 2010 .

[3]  M. Goorsky,et al.  Determination of stress distribution in III–V single crystal layers for heterogeneous integration applications , 2007 .

[4]  Y. Chu,et al.  Strain mapping with parts-per-million resolution in synthetic type-Ib diamond plates , 2005 .

[5]  A. Henry,et al.  Doping-induced strain in N-doped 4H-SiC crystals , 2003 .

[6]  C. Ferrari,et al.  Study of residual strains in wafer crystals by means of lattice tilt mapping , 1997 .

[7]  M. Henini,et al.  Properties of strained and relaxed silicon germanium , 1996 .

[8]  Erich Kasper,et al.  Properties of strained and relaxed silicon germanium , 1995 .

[9]  M. Dudley,et al.  Compositional, strain contour and property mapping of CdZnTe boules and wafers , 1993 .

[10]  S. Stock,et al.  The measurement of strain fields by X-ray topographic contour mapping , 1986 .

[11]  B. Tanner,et al.  Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography. , 1984 .

[12]  D. K. Bowen,et al.  The double crystal X-ray camera at Daresbury laboratory , 1983 .

[13]  S. Kikuta,et al.  Measurements on Local Variations in Spacing and Orientation of the Lattice Plane of Silicon Single Crystals by X-Ray Double-Crystal Topography , 1966 .