The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
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D. Nirmal | N. Mohankumar | A. Shobha Rekh | Binola K. Jebalin | P. Prajoon | N. Mohankumar | D. Nirmal | P. Prajoon | B. K. Jebalin | A. Rekh
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