A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.

[1]  Walter Riess,et al.  Silicon nanowire tunneling field-effect transistors , 2008 .

[2]  D. Klaassen,et al.  A new recombination model for device simulation including tunneling , 1992 .

[3]  Rui Li,et al.  Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned , 2012, IEEE Electron Device Letters.

[4]  Hiroshi Iwai,et al.  Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI , 1995 .

[5]  K. Steinhubl.  Design of Ion-Implanted MOSFET'S with Very Small Physical Dimensions , 1974 .

[6]  G. W. Taylor,et al.  The effects of two-dimensional charge sharing on the above-threshold characteristics of short-channel IGFETS , 1979 .

[7]  Byung-Gook Park,et al.  Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec , 2007, IEEE Electron Device Letters.

[8]  陽亮 丹羽,et al.  Na 添加 Mg2Si の熱電特性 , 2008 .

[9]  O. Faynot,et al.  Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[10]  Dmitri E. Nikonov,et al.  Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations , 2013, 2013 IEEE International Electron Devices Meeting.

[11]  K. Saraswat,et al.  Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope , 2008, 2008 IEEE International Electron Devices Meeting.

[12]  R.H. Dennard,et al.  Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions , 1974, Proceedings of the IEEE.

[13]  Amy W. K. Liu,et al.  Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities , 2011 .

[14]  Massimo Vanzi,et al.  A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[15]  P. Dobson.  Physics of Semiconductor Devices (2nd edn) , 1982 .

[16]  Takashi Kato,et al.  Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients , 2011 .

[17]  I. Young,et al.  Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length , 2013, 2013 IEEE International Electron Devices Meeting.

[18]  E. Goranova,et al.  Heterojunctions between Silicon and the Semiconducting Metal Silicides β-FeSi2 and MgSi2 , 2007 .

[19]  Robert G. Morris,et al.  Semiconducting Properties of Mg 2 Si Single Crystals , 1958 .

[20]  Karen Maex,et al.  Silicides for integrated circuits: TiSi2 CoSi2 , 1993 .

[21]  D. Esseni,et al.  Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope , 2013, 2013 IEEE International Electron Devices Meeting.

[22]  S. Takagi,et al.  Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[23]  Saravanan Muthiah,et al.  Conducting grain boundaries enhancing thermoelectric performance in doped Mg2Si , 2013 .

[24]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[25]  Robert G. Morris,et al.  Semiconducting properties of Mg2Si single crystals , 1957 .

[26]  Y. J. Lee,et al.  Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As , 2008 .

[27]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[28]  Cohen,et al.  Structural, bonding, and electronic properties of IIA-IV antifluorite compounds. , 1993, Physical review. B, Condensed matter.

[29]  C. Hu,et al.  Si tunnel transistors with a novel silicided source and 46mV/dec swing , 2010, 2010 Symposium on VLSI Technology.