Low noise JFETs for room temperature x-ray detectors
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James D. Phillips | Raymond T. Perkins | Keith W. Decker | R. Perkins | M. Lund | Mark W Lund | J. Phillips | K. Decker
[1] K. Kandiah,et al. Random telegraph signal currents and low-frequency noise in junction field effect transistors , 1994 .
[2] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[3] J. Stathis,et al. Moderate‐temperature anneal of 7‐nm thermal SiO2 in O2‐ and H2O‐free atmosphere: Effects on Si‐SiO2 interface‐trap distribution , 1991 .
[4] G. White,et al. A low noise FET with integrated charge restoration for radiation detectors , 1990 .
[5] P. Manfredi. New Perspectives in Low Noise Preamplifier Design for Room Temperature Detector Applications , 1993 .
[6] K. Kandiah,et al. Limits of resolution of charge sensitive detector systems , 1993 .
[7] Marco Sampietro,et al. Suboptimal filtering of 1/ƒ-noise in detector charge measurements , 1990 .
[8] H. Koyama,et al. Si/SiO2 interface states and neutral oxide traps induced by surface microroughness , 1995 .
[9] D. Sodini,et al. A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors , 1981 .
[10] S. Asai,et al. Excess gate current analysis of junction gate FET's by two- dimensional computer simulation , 1978, IEEE Transactions on Electron Devices.
[11] G. White,et al. Status at Harwell of Opto-Electronic and Time-Variant Signal Processing for High Performance Nuclear Spectrometry with Semiconductor Detectors , 1981, IEEE Transactions on Nuclear Science.
[12] Veljko Radeka,et al. Semiconductor position-sensitive detectors , 1984 .
[13] K. Kandiah,et al. Nonideal behaviour of buried channel CCDs caused by oxide and bulk silicon traps , 1991 .
[14] D. Fleetwood,et al. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .
[15] E. Burte. Time resolved annealing of interface traps at the silicon oxide‐silicon interface , 1988 .
[16] Iwao Ohdomari,et al. Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films , 1992 .