Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
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Hideki Hasegawa | Eiichi Sano | Toshiki Makimoto | Tamotsu Hashizume | Noboru Negoro | Kazuhide Kumakura | S Sanguan Anantathanasarn
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