论文信息 - SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers - 字舞流文

SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers

G. Luo | C. Chu | Chun-Hsiung Lin | Bo-Yuan Chen | Wen-Fa Wu | We Chang | Yao-Jen Lee | Yi-Shuo Huang | W. Yeh