论文信息 - Noninvasive optical probe of free charge and applied voltage in GaAs devices

Noninvasive optical probe of free charge and applied voltage in GaAs devices

We have demonstrated an application of a noninvasive optical probe that can independently measure both free sheet charge density and applied voltage in GaAs devices. Large‐signal direct‐current measurements of voltage and charge were made on a Schottky diode without any assumption of the device parameters. The measurements are reproducible, and no adjustable parameters have been used to quantitatively measure charge and voltage. In addition to a lateral charge resolution, given by the beam spot size, we have observed a longitudinal resolution due to the standing wave in the probe beam.

[1] W. Wiegmann,et al. Low-temperature absorption spectrum in GaAs in the presence of optical pumping , 1977 .

[2] Stefan Schmitt-Rink,et al. Electron theory of the optical properties of laser-excited semiconductors , 1984 .

[3] R. Soref,et al. Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb , 1987 .

[4] B. Auld,et al. Full-field modeling of the longitudinal electro-optic probe. , 1987, Optics letters.

[5] David M. Bloom,et al. Picosecond optical sampling of GaAs integrated circuits , 1988 .

[6] E. Burstein. Anomalous Optical Absorption Limit in InSb , 1954 .

[7] C. Kittel. Introduction to solid state physics , 1954 .

[8] Stephan W Koch,et al. A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors , 1986 .

[9] Brian H. Kolner,et al. Electrooptic Sampling of GaAs Integrated Circuits , 1986, Topical Meeting on Ultrafast Phenomena.

[10] G. Martin,et al. Optical assessment of the main electron trap in bulk semi‐insulating GaAs , 1981 .

[11] H. K. Heinrich,et al. Noninvasive sheet charge density probe for integrated silicon devices , 1986 .

[12] H. C. Casey,et al. Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .