Pairing of cation vacancies and gap-state creation in TiO2 and HfO2
暂无分享,去创建一个
[1] G. Kresse,et al. Ab initio molecular dynamics for liquid metals. , 1993 .
[2] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[3] J. Pascual,et al. Fine structure in the intrinsic absorption edge of Ti O 2 , 1978 .
[4] A. Shluger,et al. Vacancy and interstitial defects in hafnia , 2002 .
[5] C. Hwang,et al. First-principles study of point defects in rutileTiO2−x , 2006 .
[6] David Vanderbilt,et al. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide , 2002 .
[7] Cheol Seong Hwang,et al. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density , 2005 .
[8] B. Alder,et al. THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHOD , 2010 .
[9] J. Coey,et al. Thin films: Unexpected magnetism in a dielectric oxide , 2004, Nature.
[10] Hafner,et al. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. , 1994, Physical review. B, Condensed matter.
[11] Michael M. Schieber,et al. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds , 1977 .
[12] M. A. Navacerrada,et al. Physical properties of high pressure reactively sputtered TiO2 , 2005 .
[13] S. Sanvito,et al. Ferromagnetism driven by intrinsic point defects in HfO(2). , 2005, Physical review letters.
[14] Chelikowsky,et al. Structural and electronic properties of titanium dioxide. , 1992, Physical review. B, Condensed matter.
[15] A. Demkov. Investigating Alternative Gate Dielectrics: A Theoretical Approach , 2001 .