Fabrication of Cryogenic Readout Circuits with n-type GaAs-JFETs for Low Temperature Detectors

We present the design and fabrication of cryogenic readout integrated circuits (ROICs) for Superconducting Tunneling Junctions using the SONY n-type GaAs-JFETs, which have good current-voltage characteristics and low noise performance even at <1 K. In order to fabricate the ROICs, we have designed simple GaAs-JFET amplifiers based on the measurement results of the GaAs-JFETs at <4.2 K: source follower amplifier, common source amplifier, and two types of cascode amplifiers. The obtainable gain of the cascode active load amplifiers is >100. These amplifiers were fabricated with the other circuit elements as an integrated circuit. We also show initial test results of the cascode active load amplifier.

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