Strained Silicon on Insulator (SSOI) by Wafer Bonding

Semiconductor wafer direct bonding combined with mechanical grinding of the donor wafer and chemical etching of the remaining silicon as well as the SiGe layer is an alternative to the hydrogen-induced layer transfer (HILT). This process allows a larger window for thermal treatments. In combination with modified insulator layers also improvements of the electrical properties and optimized strain engineering in the layer system is expected. Furthermore, the improved deposition process of the SiGe buffer allows wafer bonding without additional planarization steps

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