论文信息 - 0.18-V Input Charge Pump with Forward Body Biasing in Startup Circuit using 65nm CMOS - 字舞流文

0.18-V Input Charge Pump with Forward Body Biasing in Startup Circuit using 65nm CMOS

S. Takayasu | Chen Po-Hung | Ishida Koichi | Zhang Xin | Okuma Yasuyuki | Ryu Yoshikatsu | Takamiya Makoto