C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

We prepared a SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structure. A clear positive shift in C-V and G-V curves due to electrons trapped in nc-Si dots has been observed at room temperature. The peak in conductance around flat band condition indicates that a trap event had occurred where an electron is stored per nc-Si dot. A logarithmic charge loss function is found and this discharging process is independent of the thermal activation mechanism. The longer memory retention time and logarithmic charge loss in the dots are explained by a “built-in” electric field through the tunnel oxide, which varies with time, resulting in a variable tunneling probability. The electric repulsion induced by the built-in electric field hinders the discharging of electrons remained in the dots.

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