All-printed diode operating at 1.6 GHz
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Göran Gustafsson | Xianjie Liu | Magnus Svensson | Magnus Berggren | Mats Fahlman | Mats Robertsson | Isak Engquist | Xavier Crispin | Hjalmar Hesselbom | Philip Cooper | Peter Andersson Ersman | Negar Sani | Xin Wang | Petronella Norberg | Marie Nilsson | David Nilsson | Laurent Akesso | X. Crispin | G. Gustafsson | D. Nilsson | H. Hesselbom | Xianjie Liu | M. Fahlman | Isak Engquist | M. Robertsson | X. Wang | N. Sani | P. Andersson Ersman | P. Norberg | Laurent Akesso | M. Berggren | Marie Nilsson | P. Cooper | Magnus Svensson | Peter Andersson Ersman | Negar Sani
[1] A. Holmes-Siedle,et al. Semiconductor Devices , 1976, 2018 International Semiconductor Conference (CAS).
[2] Tatsuya Shimoda,et al. Solution-processed silicon films and transistors , 2006, Nature.
[3] A. Afzali,et al. High-mobility ultrathin semiconducting films prepared by spin coating , 2004, Nature.
[4] G. Pananakakis,et al. Electrical characterization of Al-SiO2-Si (N-type) tunnel structures. Influence of LPCVD and LPO2 oxide growth technologies on the properties of the Si-SiO2 interface , 1983 .
[5] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[6] Jasprit Singh. Semiconductor Devices: Basic Principles , 2000 .
[7] Doinita Neiner,et al. A new solution route to hydrogen-terminated silicon nanoparticles: synthesis, functionalization and water stability , 2007, Nanotechnology.
[8] Frank Ellinger,et al. Organic pin-diodes approaching ultra-high-frequencies , 2012 .
[9] Conal E. Murray,et al. High‐Mobility Ultrathin Semiconducting Films Prepared by Spin Coating. , 2004 .
[10] Mats Robertsson,et al. Printable rectifying device using Si-composite , 2008 .
[11] A. Turut,et al. Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes , 1996 .
[12] Samit K. Ray,et al. Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si , 2013 .
[13] Daoben Zhu,et al. High‐Performance Organic Field‐Effect Transistors Based on Single and Large‐Area Aligned Crystalline Microribbons of 6,13‐Dichloropentacene , 2013, Advanced materials.
[14] Weidong Zhou,et al. Fast flexible electronics with strained silicon nanomembranes , 2013, Scientific Reports.
[15] Ridley,et al. All-Inorganic Field Effect Transistors Fabricated by Printing. , 1999, Science.
[16] J. Genoe,et al. Ultra-High Frequency rectification using organic diodes , 2008, 2008 IEEE International Electron Devices Meeting.
[17] Jinsoo Noh,et al. Fully roll-to-roll gravure printed rectenna on plastic foils for wireless power transmission at 13.56 MHz , 2012, Nanotechnology.
[18] Kevin L. Jensen,et al. Electron emission theory and its application: Fowler–Nordheim equation and beyond , 2003 .
[19] John E. Anthony,et al. High-mobility spin-cast organic thin film transistors , 2008 .
[20] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[21] Seiichi Iwata,et al. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics , 1996 .
[22] Daniel R. Gamota,et al. Fully printed silicon field effect transistors , 2009 .
[23] F. Morris,et al. Zero bias resonant tunnel Schottky contact diode for wide-band direct detection , 2005, IEEE Electron Device Letters.
[24] R. Stark,et al. Stability of the hydrophilic behavior of oxygen plasma activated SU-8 , 2007 .
[25] M. S. Hunter,et al. Natural and Thermally Formed Oxide Films on Aluminum , 1956 .
[26] K. S. Champlin,et al. Cutoff Frequency of Submillimeter Schottky-Barrier Diodes , 1978 .
[27] Bo Zhang,et al. Materials for Printable, Transparent, and Low‐Voltage Transistors , 2011 .
[28] Joungho Kim,et al. Towards Gigahertz Operation: Ultrafast Low Turn‐on Organic Diodes and Rectifiers Based on C60 and Tungsten Oxide , 2011, Advanced materials.
[29] Robert M. Wallace,et al. SiO2 film thickness metrology by x-ray photoelectron spectroscopy , 1997 .
[30] M. Commandré,et al. SiO2 ultra thin film growth kinetics as investigated by surface techniques , 1982 .
[31] H. C. Card,et al. Asymmetry in the SiO2 tunneling barriers to electrons and holes , 1980 .
[32] Akira Yamauchi,et al. Improvement of Oxidation Resistance of NbSi2 by Addition of Boron , 2005 .
[33] Steffen Oswald,et al. Characterisation of oxide and hydroxide layers on technical aluminum materials using XPS , 2012 .
[34] A. Singh,et al. A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure , 1997 .
[35] Peter Andersson,et al. Active Matrix Displays Based on All‐Organic Electrochemical Smart Pixels Printed on Paper , 2002 .
[36] A. N. Daw,et al. On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode , 1986 .
[37] A. Tataroğlu,et al. The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes , 2005 .
[38] Hamid Jabbar,et al. RF energy harvesting system and circuits for charging of mobile devices , 2010, IEEE Transactions on Consumer Electronics.
[39] J. Frenkel,et al. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors , 1938 .
[40] J. Van der Spiegel,et al. Niobium disilicide formation by rapid thermal processing: Resistivity‐grain growth correlation and the role of native oxide , 1990 .
[41] R. L. Meirhaeghe,et al. Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation , 1994 .
[42] A. Tataroğlu,et al. The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes , 2003 .
[43] Donald Lupo,et al. Gravure printed organic rectifying diodes operating at high frequencies , 2009 .
[44] H C Card,et al. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes , 1971 .
[45] Orven F. Swenson,et al. Printed silicon as diode and FET materials – Preliminary results , 2008 .
[46] Masaki Hara,et al. High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing , 1995 .
[47] Zhenqiang Ma,et al. Flexible RF/Microwave Switch-PIN Diodes Using Single-Crystal Si-Nanomembranes , 2007, 2007 IEEE/MTT-S International Microwave Symposium.
[48] S. Usui,et al. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's , 1986, IEEE Electron Device Letters.
[49] Kris Myny,et al. 50 MHz rectifier based on an organic diode , 2005, Nature materials.
[50] Zhenqiang Ma,et al. 7.8-GHz flexible thin-film transistors on a low-temperature plastic substrate , 2007 .
[51] J. P. Gambino,et al. Determination of the Fowler–Nordheim tunneling parameters from the Fowler–Nordheim plot , 2001 .
[52] Joseph J. Carr. RF components and circuits , 2002 .
[53] Shinhyuk Yang,et al. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates , 2013 .
[54] Prusayon Nintanavongsa,et al. Design Optimization and Implementation for RF Energy Harvesting Circuits , 2012, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.