论文信息 - Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition - 字舞流文

Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

M. Calicchio | C. Ferrari | Liudi Jiang | G. Attolini | M. Bosi | E. Buffagni | C. Frigeri | B. Pécz | M. Negri | F. Riesz | G. Borionetti | I. Cora | Z. Osváth