论文信息 - On the frequency dependence of GaAs Schottky barrier capacitances

On the frequency dependence of GaAs Schottky barrier capacitances

Abstract A simple model for semiconductors with not too deep donors is proposed, which gives a connection between the frequency dependence observed with GaAs Schottky barrier capacitances and some parameters of these donors. It is shown that the capacitance can be separated into a voltage dependent and a frequency dependent part in the form 1 C = 1 C 1 (U) + 1 C 2 (ω) as already known from step junctions. Explicit expressions for C 1 ( U ) and C 2 ( ω ) are given. The predictions of the model are compared with experimental results. It emerges a method for the determination of the total donor concentration.

K. Hesse | H. Strack | K. Hesse | H. Strack

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