论文信息 - Measurement of hole velocity in n-type InGaAs

Measurement of hole velocity in n-type InGaAs

Hole drift velocities in n‐type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit‐time‐limited InGaAs p‐i‐n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.

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