A new algorithm to extract the nonlinear model of MESFETS and HEMTS
暂无分享，去创建一个
[1] Ignasi Corbella,et al. Instantaneous model of a MESFET for use in linear and nonlinear circuit simulations , 1992 .
[2] Yoji Ohashi,et al. An approach to determining an equivalent circuit for HEMTs , 1995 .
[3] Michael B. Steer,et al. Extraction of the parameters of equivalent circuits of microwave transistors using tree annealing , 1990 .
[4] M.-K. Vai,et al. Modeling of microwave semiconductor devices using simulated annealing optimization , 1989 .
[5] Rob A. Rutenbar,et al. Simulated annealing algorithms: an overview , 1989, IEEE Circuits and Devices Magazine.
[6] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[7] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .
[8] Naofumi Okubo,et al. A new empirical large-signal HEMT model , 1996 .
[9] Dominique Schreurs,et al. Consistent small-signal and large-signal extraction techniques for heterojunction FET's , 1995 .
[10] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[11] Thomas J. Brazil,et al. A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .