Improved dielectrically isolated device integration by silicon-wafer direct bonding(SDB) technique

An improved Dielectric Isolation (DI) technique, involving a novel Silicon-wafer Direct Bonding(SDB) method was investigated, including the SDB key processes and thermographic SDB wafer evaluation technique. In order to study the novel DI technique application feasibility, a series connected 23 photo-diode array was fabricated. All of the results showed attractive features for use in overcoming conventional DI technique limitations for high voltage, high current device integration.