Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
暂无分享,去创建一个
V. V. Emtsev | D. I. Kryzhkov | V. Davydov | D. Poloskin | C. A. Londos | A. Misiuk | B. Andreev | G. Oganesyan | V. Shmagin
[1] D. I. Kryzhkov,et al. Study of IR absorption and photoconductivity spectra of thermal double donors in silicon , 2003 .
[2] S. Öberg,et al. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations , 2000 .
[3] B. Surma,et al. Nucleation and formation of oxygen precipitates in Czochralski grown silicon annealed under uniform stress conditions , 1998 .
[4] V. V. Emtsev,et al. Oxygen aggregation in Czochralski-grown silicon heat treated at 450 °C under compressive stress , 1997 .
[5] Zulehner,et al. Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon. , 1992, Physical review. B, Condensed matter.
[6] P. Wagner,et al. Thermal double donors in silicon , 1989 .
[7] B. Surma,et al. Stress-induced oxygen precipitation in Cz-Si , 1996 .