Heterodyne gain and noise measurement of a 1.5 µm resonant semiconductor laser amplifier

The noise and gain characteristics of a 1.5μm resonant semiconductor laser amplifier have been measured. A heterodyne detection scheme was used to measure the gain and noise properties relevant to coherent communication applications. Measurements were made with the amplifier operating in unsaturated, saturated, and injection-locked regimes. Unsaturated internal gain as high as 29 dB was measured with the amplifier operating close to threshold. Measured signal-to-noise ratios agree well with calculated results and are 9 dB below the input quantum shot noise limit. A degradation in the amplifier performance is observed when operated above or at threshold. Gain saturation for high input powers also degrades the noise characteristics of the amplifier.

[1]  Gain characteristics of a 1.5 μm DCPBH InGaAsP resonant optical amplifier , 1985 .

[2]  D. M. Fye.  Relationship between carrier-induced index change and feedback noise in diode lasers , 1982 .

[3]  Yoshihisa Yamamoto,et al.  Noise and error rate performance of semiconductor laser amplifiers in PCM-IM optical transmission systems , 1980 .

[4]  C. Henry.  Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiers , 1986 .

[5]  Tatsuya Kimura,et al.  Gain and saturation power of resonant AlGaAs laser amplifier , 1980 .

[6]  N. A. Olsson,et al.  Locking range and stability of injection locked 1.54 µm InGaAsp semiconductor lasers , 1985 .

[7]  J. Simon.  Semiconductor Laser Amplifier for Single Mode Optical Fiber Communications , 1983 .

[8]  Dietrich Marcuse,et al.  Computer model of an injection laser amplifier , 1983 .

[9]  Y. Yamamoto.  Characteristics of AlGaAs Fabry-Perot cavity type laser amplifiers , 1980, IEEE Journal of Quantum Electronics.

[10]  C. Henry.  Chapter 3 Spectral Properties of Semiconductor Lasers , 1985 .

[11]  Takashi Kimura,et al.  Fabry-Perot cavity type 1.5 μm InGaAsP BH-laser amplifier with small optical-mode confinement , 1983 .

[12]  Tetsuya Nakai,et al.  Asymmetric Frequency Response of Semiconductor Laser Amplifiers , 1982 .

[13]  R. Wyatt,et al.  10 kHz linewidth 1.5 μm InGaAsP external cavity laser with 55 nm tuning range , 1983 .

[14]  N. A. Olsson,et al.  Reflection noise in index-guided InGaAsP lasers , 1986 .

[15]  S. Kobayashi,et al.  Injection locking in AlGaAs semiconductor laser , 1981 .

[16]  Tuning characteristics of optical amplification in 1.5 μm InGaAsP/InP lasers , 1983 .