150 A SiC V-groove trench gate MOSFET with 6 × 6 mm2 chip size on a 150 mm C-face in-house epitaxial wafer
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Y. Saitoh | K. Wada | M. Sakai | K. Hiratsuka | Y. Mikamura | So Tanaka | Taku Horii | H. Itoh
暂无分享,去创建一个
Y. Saitoh | K. Wada | M. Sakai | K. Hiratsuka | Y. Mikamura | So Tanaka | Taku Horii | H. Itoh