Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester
暂无分享,去创建一个
Heung Cho Ko | Sunghoon Song | B. Cho | Yongsung Ji | Takhee Lee | G. Jung | Ho-Gil Choi | Jae-Suk Lee
[1] Byungjin Cho,et al. Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices , 2011 .
[2] H. Hwang,et al. Three‐Dimensional Integration of Organic Resistive Memory Devices , 2010, Advanced materials.
[3] Mengyuan Li,et al. Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage , 2010 .
[4] Tae-Wook Kim,et al. Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate , 2010, Advanced materials.
[5] Tae-Wook Kim,et al. Unipolar nonvolatile memory devices with composites of poly(9-vinylcarbazole) and titanium dioxide nanoparticles , 2009 .
[6] F. Zeng,et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.
[7] Koon Gee Neoh,et al. Polymer electronic memories: Materials, devices and mechanisms , 2008 .
[8] Yi-Jen Chan,et al. A 16-Byte Nonvolatile Bistable Polymer Memory Array on Plastic Substrates , 2007, 2007 IEEE International Electron Devices Meeting.
[9] Won-Jae Joo,et al. Metal filament growth in electrically conductive polymers for nonvolatile memory application. , 2006, The journal of physical chemistry. B.
[10] Haijun Yan,et al. Redox-driven conductance switching via filament formation and dissolution in carbon/molecule/TiO2/Ag molecular electronic junctions. , 2006, Langmuir : the ACS journal of surfaces and colloids.