IEEE 1988 Bipolar Circuits E Tdnology Meeting 'An Experimental Soft-error Immune 64-Kb 3ns ECL Bipolar RAM"

An experimental soft-error immune 64-Kb 3x1s ECL RAM has been developed. Its key factors are: a soft-error immune memory cell, an upward transistor decoder. a darlington word driver with advanced discharge circuits, and 0.8Lrm SICOS technology.