Photolithographic properties of tin-oxo clusters using extreme ultraviolet light (13.5 nm)

Abstract We have studied the photolysis of tin clusters of the type [(RSn) 12 O 14 (OH) 6 ] X 2 using extreme ultraviolet (EUV, 13.5 nm) light, and developed these clusters into novel high-resolution photoresists. A thin film of [(BuSn) 12 O 14 (OH) 6 ][ p -toluenesulfonate] 2 ( 1 ) was prepared by spin coating a solution of ( 1 ) in 2-butanone onto a silicon wafer. Exposure to EUV light caused the compound ( 1 ) to be converted into a substance that was markedly less soluble in aqueous isopropanol. To optimize the EUV lithographic performance of resists using tin-oxo clusters, and to gain insight into the mechanism of their photochemical reactions, we prepared several compounds based on [(RSn) 12 O 14 (OH) 6 ] X 2 . The sensitivity of tin-oxide films to EUV light were studied as a function of variations in the structure of the counter-anions ( X , primarily carboxylates) and organic ligands bound to tin ( R ). Correlations were sought between the EUV sensitivity of these complexes vs. the strength of the carbon–carboxylate bonds in the counter-anions and vs. the strength of the carbon–tin bonds. No correlation was observed between the strength of the carbon–carboxylate bonds in the counter-anions ( X ) and the EUV photosensitivity. However, the EUV sensitivity of the tin-oxide films appears to be well-correlated with the strength of the carbon–tin bonds. We hypothesize this correlation indicates a mechanism of carbon–tin bond homolysis during exposure. Using these tin clusters, 18-nm lines were printed showcasing the high resolution capabilities of these materials as photoresists for EUV lithography.

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