Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography
暂无分享,去创建一个
Kenneth D. M. Harris | Richard E. Palmer | Alex P. G. Robinson | Jon A. Preece | Toshihiko Kanayama | Tetsuya Tada | K. Harris | J. Preece | T. Tada | T. Kanayama | R. Palmer | A. Robinson | M. T. Allen | M. Allen
[1] Richard E. Palmer,et al. A Fullerene derivative as an electron beam resist for nanolithography , 1998 .
[2] Kenji Yamazaki,et al. Influence of edge roughness in resist patterns on etched patterns , 1998 .
[3] Shinji Matsui,et al. Ultrahigh resolution of calixarene negative resist in electron beam lithography , 1996 .
[4] Toshihiko Kanayama,et al. Nanolithography Using Fullerene Films as an Electron Beam Resist , 1996 .
[5] E. Dobisz,et al. Control in sub-100 nm lithography in SAL-601 , 1997 .
[6] R. A. Smith,et al. A silicon Coulomb blockade device with voltage gain , 1997 .
[7] Kenji Gamo,et al. Novel class of low molecular‐weight organic resists for nanometer lithography , 1996 .
[8] Jun-ichi Fujita,et al. Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650 , 1998 .
[9] S. Matsui,et al. Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography , 1997 .
[10] Jaw-Shen Tsai,et al. Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beam , 1995 .
[11] Harold G. Craighead,et al. Sub-10 nm lithography with self-assembled monolayers , 1996 .
[12] G. Whitesides,et al. Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field , 1997 .
[13] K. Harris,et al. Intermolecular organization of triphenylene-based discotic mesogens by interdigitation of alkyl chains , 2000 .
[14] N. Boden,et al. The synthesis of triphenylene‐based discotic mesogens New and improved routes , 2006 .
[15] Wei Chen,et al. Fabrication of high aspect ratio silicon pillars of <10 nm diameter , 1993 .
[16] Richard E. Palmer,et al. Electron beam induced fragmentation of fullerene derivatives , 1998 .
[17] T. Makino,et al. Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching , 1997 .
[18] S. Raible,et al. Systematic studies of functionalized calixarenes as negative tone electron beam resist , 1998 .
[19] Toshitsugu Sakamoto,et al. Calixarene Electron Beam Resist for Nano-Lithography , 1997 .
[20] Kenji Yamazaki,et al. Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films , 1997 .
[21] T. Tada,et al. Fabrication of silicon nanostructures with a poly(methylmethacrylate) single‐layer process , 1995 .
[22] D. Cumming,et al. Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist , 1996 .
[23] Wei Chen,et al. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist , 1993 .
[24] H. Craighead,et al. Improved electron‐beam patterning of Si with self‐assembled monolayers , 1996 .
[25] E. Fabrizio,et al. Nanometer biodevice fabrication by electron beam lithography , 1997 .
[26] Hiroshi Ishikawa,et al. Temperature dependent lasing characteristics of multi-stacked quantum dot lasers , 1997 .
[27] C. Torres,et al. Fabrication and characterisation of Si-Si/sub 0.7/Ge/sub 0.3/ quantum dot light emitting diodes , 1995 .
[28] F. Cerrina,et al. Handbook of Microlithography, Micromachining, and Microfabrication. Volume 1: Microlithography , 1997 .
[29] Shinji Okazaki,et al. Nano edge roughness in polymer resist patterns , 1993 .
[30] Kenneth D. M. Harris,et al. 10 nm scale electron beam lithography using a triphenylene derivative as a negative/positive tone resist , 1999 .
[31] Toshiro Hiramoto,et al. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor , 1997 .