论文信息 - Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)

Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)

The electrical properties of unintentionally-doped InP epitaxial layers grown on (100) InP:Fe substrates by Metalorganic Chemical Vapor Deposition (MOCVD) have been studied as a function of the source materials and the deposition conditions. The low-temperature (77K) photoluminescence of these films was also studied and used to identify zinc as the major residual acceptor in these films.

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