High voltage wiring using biased polysilicon field plates

Abstract This paper describes a technique for 800V wiring in a typical high voltage integrated circuit. Polysilicon field plates are biased using undoped poly resistors, connected in a voltage division scheme between the high voltage source and ground (A.F.J. Murray and W.A. Lane, Proc. 23rd European Solid State Device Research Conf. (ESSDERC'93), 1993, pp. 891–894). The field plates linearize the potential along the surface between the high voltage drain and the grounded isolation, and hence reduce the surface field at the isolation edge. 2D numerical simulation is used to illustrate the effect of spacing variation between the field plates and the 3D effect of a real wire. The inter-layer dielectric is also investigated using initial measured results.

[1]  R.A. Martin,et al.  850V NMOS driver with active outputs , 1984, 1984 International Electron Devices Meeting.

[2]  Philip K. T. Mok,et al.  Interconnect Induced Breakdown in HVICs , 1989 .

[3]  A.W. Ludikhuize.  A versatile 250/300-V IC process for analog and switching applications , 1986, IEEE Transactions on Electron Devices.

[4]  A.F.J. Murray,et al.  Parasitic breakdown control in HVIC process integration , 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

[5]  N. Fujishima,et al.  A novel field plate structure under high voltage interconnections , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

[6]  Y. Sugawara,et al.  Field reduction regions for compact high-voltage IC's , 1987, IEEE Transactions on Electron Devices.

[7]  W. Gerlach,et al.  Influence of interconnections onto the breakdown voltage of planar high-voltage p-n junctions , 1993 .

[8]  J. Appels,et al.  High voltage thin layer devices (RESURF devices) , 1979, 1979 International Electron Devices Meeting.

[9]  V.A.K. Temple,et al.  Junction termination extension (JTE), A new technique for increasing avalanche breakdown voltage and controlling surface electric fields in P-N junctions , 1977, 1977 International Electron Devices Meeting.