Effect of reactor geometry and growth parameters on the uniformity and material properties of {GaN}/{sapphire} grown by hydride vapor-phase epitaxy
暂无分享,去创建一个
Thomas F. Kuech | Richard J. Matyi | R. Matyi | T. Kuech | N. Perkins | S. A. Safvi | N. R. Perkins | M. N. Horton
[1] K. Hiramatsu,et al. Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy , 1994 .
[2] Bo Monemar,et al. Luminescence in epitaxial GaN : Cd , 1974 .
[3] The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates , 1994 .
[4] G. Strang,et al. An Analysis of the Finite Element Method , 1974 .
[5] R. Reid,et al. The Properties of Gases and Liquids , 1977 .
[6] C. F. Curtiss,et al. Molecular Theory Of Gases And Liquids , 1954 .
[7] Olson,et al. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition. , 1995, Physical review. B, Condensed matter.
[8] Toshio Ogino,et al. Mechanism of Yellow Luminescence in GaN , 1980 .
[9] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[10] Susumu Handa,et al. Theoretical study on the direct reaction between AsH3 and surface-adsorbed GaCl , 1995 .
[11] V. S. Ban,et al. Mass Spectrometric Studies of Vapor‐Phase Crystal Growth II . , 1971 .
[12] T. J. Mountziaris,et al. A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethyl-gallium and tertiary-butyl-arsine , 1993 .
[13] K. Heime,et al. Growth of semi-insulating InP: Fe in the low pressure hydride VPE system , 1992 .
[14] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .
[15] Manijeh Razeghi,et al. Growth of AlxGa1−xN:Ge on sapphire and silicon substrates , 1995 .
[16] J. Hutchby,et al. Photoluminescence of ion‐implanted GaN , 1976 .
[17] D. Shaw. KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III–V COMPOUNDS , 1975 .