Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

This paper presents an analytical model for input, output, and reverse capacitance of a normally on AlGaN/GaN high-electron mobility transistor (HEMT) with a gate field-plate structure, when the device is in the subthreshold regime. Together with the existing model for the output I-V characteristics, the proposed capacitance model provides the complete set of analytical equations that relate the physical design parameters to the electrical characteristics of the device. The model was verified by the experimental characterization of a HEMT. In comparison to the physics-based models implemented in Finite Element Analysis tools, the obtained capacitance model has substantially lower level of complexity and, therefore, it is more suitable for implementation into iterative design optimization algorithms. In order to verify the proposed model for such usage, the prototype of a high-frequency buck converter was built, using previously modeled GaN HEMT as the main switch. The hybrid analytical-behavioral power loss model of a high-frequency buck converter was implemented into Simplorer simulation tool, using the proposed physics-based model as the device description for the capacitive part. The efficiency measurements showed good agreement with the simulation results, even at 20 MHz of switching frequency in the low range of the output power.

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