Cold-capable, radiation-hardened SiGe BiCMOS wireline transceivers
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Laleh Najafizadeh | Ryan Diestelhorst | Troy England | John Cressler | Chandim Chatterjee | Nelson Lourenco | Steven Finn | Stanley Phillips | Eleazar Kenyon
[1] Fan Chen,et al. Silicon-Germanium Heterojunction Bipolar Transistors , 2002 .
[2] John D. Cressler,et al. Extreme Environment Electronics , 2012 .
[3] J.D. Cressler,et al. Sub-1-K Operation of SiGe Transistors and Circuits , 2009, IEEE Electron Device Letters.
[4] Laleh Najafizadeh,et al. A monolithic, wide-temperature, charge amplification channel for extreme environments , 2010, 2010 IEEE Aerospace Conference.
[5] Bongim Jun,et al. The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs , 2006, IEEE Transactions on Nuclear Science.
[6] J. Cressler,et al. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues , 1993 .
[7] R. Berger,et al. Miniaturized Data Acquisition System for Extreme Temperature Environments , 2008, 2008 IEEE Aerospace Conference.
[8] R. M. Diestelhorst,et al. A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit , 2012, IEEE Aerospace and Electronic Systems Magazine.
[9] Laleh Najafizadeh,et al. Optimization of SiGe bandgap-based circuits for up to 300 °C operation , 2011 .
[10] Xueyang Geng,et al. A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface , 2012, IEEE Aerospace and Electronic Systems Magazine.
[11] J.D. Cressler,et al. A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures , 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[12] Bongim Jun,et al. A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References , 2007, IEEE Transactions on Nuclear Science.
[13] C.M. Castaneda. Crocker Nuclear Laboratory (CNL) radiation effects measurement and test facility , 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).
[14] J D Cressler,et al. Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics , 2010, IEEE Transactions on Device and Materials Reliability.
[15] J. Cressler,et al. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations , 1993 .
[16] John D. Cressler,et al. Radiation Effects in SiGe Technology , 2013, IEEE Transactions on Nuclear Science.
[17] R. M. Diestelhorst,et al. Cold-capable SiGe BiCMOS wireline transceivers for distributed electronics systems , 2012, 2012 IEEE Aerospace Conference.
[18] J.D. Black,et al. The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments , 2007, IEEE Transactions on Nuclear Science.
[19] Andrew S. Keys,et al. A Review of NASA's Radiation-Hardened Electronics for Space Environments Project , 2008 .
[20] J. Cressler,et al. Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime , 1995, IEEE Electron Device Letters.
[21] John D. Cressler,et al. A SiGe BiCMOS instrumentation channel for extreme environment applications , 2008 .
[22] D. Harame,et al. SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY , 1994 .