Transport properties of the electron gas in thin AlAs quantum wells: interface-roughness scattering

For interface-roughness scattering and for zero temperature we compare theoretical results for the mobility of the two-dimensional electron gas present in thin AlAs quantum wells with experimental results for a well of width L=45A. The importance of many-body effects (exchange and correlation) on the mobility is discussed. For the mobility reasonable agreement between theory and experiment is obtained by taking into account a density dependent effective mass and multiple-scattering effects, which lead to a metal-insulator transition.

[1]  A. Gold.  Mobility of thin AlAs quantum wells: Theory compared to experiment , 2008 .

[2]  R. Marty,et al.  AlAs quantum wells: Transport properties of the two-dimensional electron gas , 2007 .

[3]  O. Gunawan,et al.  Two‐dimensional electrons occupying multiple valleys in AlAs , 2006, cond-mat/0606158.

[4]  M. Shayegan,et al.  High-mobility AlAs quantum wells with out-of-plane valley occupation , 2006, cond-mat/0606071.

[5]  A. Shashkin.  Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems , 2004, cond-mat/0405556.

[6]  M. Shayegan,et al.  Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells. , 2004, Physical review letters.

[7]  M. Sarachik,et al.  Metal–insulator transition in two-dimensional electron systems , 2003, cond-mat/0309140.

[8]  G. Abstreiter,et al.  Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well , 2003, cond-mat/0310107.

[9]  A. Gold.  The local-field correction for the interacting electron gas: many-body effects for unpolarized and polarized electrons , 1997 .

[10]  Gold,et al.  Correlation in Fermi liquids: Analytical results for the local-field correction in two and three dimensions. , 1993, Physical review. B, Condensed matter.

[11]  Gold.  Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width. , 1991, Physical review. B, Condensed matter.

[12]  A. Gold.  Mobility of the two‐dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities , 1989 .

[13]  Gold.  Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. , 1987, Physical review. B, Condensed matter.

[14]  A. Gold.  Metal insulator transition due to surface roughness scattering in a quantum well , 1986 .

[15]  Goetze,et al.  Localization and screening anomalies in two-dimensional systems. , 1986, Physical review. B, Condensed matter.

[16]  I. J. Fritz,et al.  Modulation‐doped (Al,Ga)As/AlAs superlattice: Electron transfer into AlAs , 1985 .

[17]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[18]  M. P. Tosi,et al.  Correlations in Electron Liquids , 1982 .