Measuring inter-layer edge placement error with SEM contours
暂无分享,去创建一个
For advanced technology nodes, the patterning of integrated circuits requires not only a very good control of critical dimensions but also a very accurate control of the alignment between layers. These two factors combine to define the metric of inter-layer edge placement error (EPE) that quantifies the quality of the pattern placement critical for yield. In this work, we consider the inter-layer EPE between a contact layer with respect to a poly layer measured with SEM contours. Inter-layer EPE was measured across wafer for various critical features to assess the importance of dimensional and overlay variability. Area of overlap between contact and poly as well as contact centroid distribution were considered to further characterize the interaction between poly and contact patterns.
[1] Takumichi Sutani,et al. Advanced CD-SEM solution for edge placement error characterization of BEOL pitch 32nm metal layers , 2018, Advanced Lithography.
[2] Jan Mulkens,et al. Patterning control strategies for minimum edge placement error in logic devices , 2017, Advanced Lithography.
[3] Stephen P. Renwick,et al. Lithographic imaging-driven pattern edge placement errors at the 10-nm node , 2016 .
[4] Yijian Chen,et al. A generalized edge-placement yield model for the cut-hole patterning process , 2014, Advanced Lithography.