Progress and Challenge in High to Ultra-High Voltage SiC Power Devices

Y. Yonezawa1), T. Kimoto2), and H. Okumura1) 1) Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2) Department of Electronic Science & Engineering Kyoto University, A1-301 Katsura, Nishikyo, Kyoto 615-8510, Japan E-mail: yoshiyuki-yonezawa@aist.go.jp (corresponding author)