Effect of oxygen on the reactions is Si/Ta/Cu and Si/TaC/Cu systems

[1]  T. Laurila,et al.  TaC as a diffusion barrier between Si and Cu , 2002 .

[2]  T. Laurila,et al.  Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system , 2002 .

[3]  T. Laurila,et al.  Effect of oxygen on the reactions in the Si/Ta/Cu metallization system , 2001 .

[4]  Fu-Rong Chen,et al.  Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing , 2001 .

[5]  Fusen E. Chen,et al.  The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers , 2001 .

[6]  B. Ekstrom,et al.  Effect of surface impurities on the Cu/Ta interface , 2000 .

[7]  T. Laurila,et al.  Failure mechanism of Ta diffusion barrier between Cu and Si , 2000 .

[8]  R. Sinclair,et al.  Thermal stability of a Cu/Ta multilayer : An intriguing interfacial reaction , 1999 .

[9]  J. Kivilahti,et al.  Metallurgical reactions controlling the brazing of Al_2O_3 with Ag–Cu–Ti filler alloys , 1998 .

[10]  A. Cros,et al.  Stability of oxides grown on tantalum silicide surfaces , 1986 .

[11]  R. Lauf,et al.  Thermodynamic properties of niobium - tantalum - oxygen solid solutions , 1977 .

[12]  E. D. Hondros,et al.  Segregation to interfaces , 1977 .

[13]  S. Stecura.  Observation of oxide particles below the apparent oxygen solubility limit in tantalum , 1974, Metallurgical and Materials Transactions B.

[14]  H. Jehn,et al.  HIGH-TEMPERATURE SOLID-SOLUBILITY LIMIT AND PHASE STUDIES IN THE SYSTEM TANTALUM--OXYGEN. , 1972 .

[15]  C. Cabral,et al.  Comparison of high vacuum and ultra‐high‐vacuum tantalum diffusion barrier performance against copper penetration , 1993 .

[16]  G. Boureau,et al.  High temperature thermodynamics of solutions of oxygen in vanadium, niobium and tantalum , 1981 .

[17]  R. W. Gurry,et al.  Physical chemistry of metals , 1953 .