Equivalent circuit model of a Ge/Si avalanche photodiode

An equivalent circuit model for a separate-absorption-charge-multiplication Ge/Si avalanche photodiode is presented. The current dependence of the resonance frequency scales with square root of current, as expected.

[1]  Yen-Chu Wang.  Small-signal characteristics of a read diode under conditions of field-dependent velocity and finite reverse saturation current , 1978 .

[2]  Joe C. Campbell,et al.  High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy , 1988 .

[3]  John E. Bowers,et al.  High gain-bandwidth-product silicon heterointerface photodetector , 1997 .

[4]  T. Tokumitsu,et al.  Analysis of high speed p-i-n photodiode S-parameters by a novel small-signal equivalent circuit model , 2002, IEEE Microwave and Wireless Components Letters.

[5]  Gyungock Kim,et al.  Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector , 2003 .

[6]  M. Kardan,et al.  A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes , 2005 .

[7]  S. Koester,et al.  Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  P. Chen,et al.  Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz , 2007, IEEE Photonics Technology Letters.

[9]  C.L. Schow,et al.  Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications , 2007, Journal of Lightwave Technology.

[10]  Myung-Jae Lee,et al.  Equivalent Circuit Model for Si Avalanche Photodetectors Fabricated in Standard CMOS Process , 2008, IEEE Electron Device Letters.

[11]  John E. Bowers,et al.  Monolithic Ge/Si avalanche photodiodes , 2009, 2009 6th IEEE International Conference on Group IV Photonics.

[12]  John E. Bowers,et al.  Origin of the gain-bandwidth-product enhancement in separate-absorption-charge-multiplication Ge/Si avalanche photodiodes , 2009, 2009 Conference on Optical Fiber Communication - incudes post deadline papers.

[13]  J. Bowers,et al.  Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product , 2009 .

[14]  K. Ng,et al.  The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.