论文信息 - Reliability aspects of 3D-oriented heterogeneous device design related to stress sensitivity of MOS transistors

Reliability aspects of 3D-oriented heterogeneous device design related to stress sensitivity of MOS transistors

vertical device integration faces the designers with new thermo-mechanical design and device exploitation problems. Temperature dependent mechanical stress spreading across the device affects its performance. This paper discusses selected performance and reliability issues related device the mechanical stress influence. Sample device optimization recipes on how to avoid performance and reliability degradation are also given.

Tomasz Bieniek | Grzegorz Janczyk | Piotr Grabiec | Jerzy Szynka

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