Exploiting Minipage-Level Mapping to Improve Write Efficiency of NAND Flash

Pushing NAND flash memory to higher density, manufacturers are aggressively enlarging the flash page size. However, the sizes of I/O requests in a wide range of scenarios do not grow accordingly. Since a page is the unit of flash read/write operations, traditional flash translation layers (FTLs) maintain the page mapping regularity. Hence, small random write requests become common, leading to extensive partial logical page writes. This write inefficiency significantly degrades the performance and increases the write amplification of flash storage. In this paper, we first propose a configurable mapping layer, called minipage, whose size is set to match I/O request sizes. The minipage-level mapping provides better flexibility in handling small writes at the cost of sequential read performance degra­dation and a larger mapping table. Then, we propose a new FTL, called PM-FTL, that exploits the minipage-level mapping to improve write efficiency and utilizes the page-level mapping to reduce the costs caused by the minipage-level mapping. Finally, trace-driven simulation results show that compared to traditional FTLs, PM-FTL reduces the write amplification and flash storage response time by an average of 33.4% and 19.1%, up to 57.7% and 34%, respectively, under 16KB flash pages and 4KB minipages.