An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

We present the potential optical performance capabilities of a next-generation extreme ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the SEMATECH Berkeley Actinic Inspection Tool (AIT), but surpassing it in every performance metric. The new synchrotron-based tool, referred to here as the SEMATECH Berkeley Actinic Imaging Tool at 0.5 NA (AIT5) will enable research on multiple generations of EUV lithography design rules. The proposed microscope features an array of user-selectable Fresnel zoneplate lenses with diffractionlimited quality and different optical properties, such as numerical aperture (NA) and magnification. An efficient all-EUV optical system with variable high magnification and direct EUV detection provides images with the highest possible signal-to-noise ratio. A lossless, customizable-coherence illuminator based on angle-scanning mirrors and an ellipsoidal condenser creates arbitrary pupil fill patterns, with partial coherence σ values up to 1.0 at 0.5 4×NA and higher. In combination with rotated zoneplate objective lenses, the illuminator will be capable of a range of discrete azimuthal angles as well, modeling the behavior of EUV steppers across a ring-field of view.

[1]  Sungmin Huh,et al.  A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection , 2010, Advanced Lithography.

[2]  Sungmin Huh,et al.  Printability and inspectability of programmed pit defects on the masks in EUV lithography , 2010, Advanced Lithography.

[3]  Kenneth A. Goldberg,et al.  Performance of actinic EUVL mask imaging using a zoneplate microscope , 2007, SPIE Photomask Technology.

[4]  Kenneth A. Goldberg,et al.  Improving the performance of the actinic inspection tool with an optimized alignment procedure , 2009, Advanced Lithography.

[5]  Kenneth A. Goldberg,et al.  Quantitative evaluation of mask phase defects from through-focus EUV aerial images , 2011, Advanced Lithography.

[6]  Kenneth A. Goldberg,et al.  Collecting EUV mask images through focus by wavelength tuning , 2009, Advanced Lithography.

[7]  Sungmin Huh,et al.  Study of real defects on EUV blanks and a strategy for EUV mask inspection , 2010, European Mask and Lithography Conference.

[8]  Iacopo Mochi Arial images phase measurement with the AIT: a new dimension in mask metrology , 2010 .

[9]  Kenneth A. Goldberg,et al.  Recent results from the Berkeley 0.3-NA EUV microfield exposure tool , 2007, SPIE Advanced Lithography.

[10]  Farhad Salmassi,et al.  Spin-on-glass coatings for the generation of superpolished substrates for use in the extreme-ultraviolet region. , 2006, Applied optics.

[11]  Guojing Zhang,et al.  System-level line-edge roughness limits in extreme ultraviolet lithography , 2008 .

[12]  Regina Soufli,et al.  Smoothing of diamond-turned substrates for extreme-ultraviolet lithography illuminators , 2004, SPIE Optics + Photonics.

[13]  Kenneth A. Goldberg,et al.  A Synchrotron‐Based Fourier‐Synthesis Custom‐Coherence Illuminator , 2004 .

[14]  Jeffrey Bokor,et al.  Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography. , 2003, Applied optics.

[15]  Alois Herkommer,et al.  AIMS EUV: the actinic aerial image review platform for EUV masks , 2011, Advanced Lithography.

[16]  Kenneth A. Goldberg Wavelength-specific reflections: A decade of EUV actinic mask inspection research , 2010 .

[17]  Winfried Kaiser,et al.  Actinic review of EUV masks , 2010, Advanced Lithography.

[18]  Weilun Chao,et al.  Demonstration of 12 nm resolution Fresnel zone plate lens based soft x-ray microscopy. , 2009, Optics express.

[19]  Iacopo Mochi,et al.  Benchmarking EUV mask inspection beyond 0.25 NA , 2008, Photomask Technology.

[20]  Kenneth A. Goldberg,et al.  Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements , 2006 .