论文信息 - Growth of very thin oxide films on silicon for use in MNOS charge storage devices - 字舞流文

Growth of very thin oxide films on silicon for use in MNOS charge storage devices

R. Oakley | G. A. Godber

[1] R. Oakley. Effect of oxide-layer thickness on the speed of m.n.o.s. transistors , 1971 .

[2] D. Frohman-Bentchkowsky,et al. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures , 1969 .

[3] E. T. Lewis,et al. CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT , 1969 .

[4] N. Cabrera,et al. Theory of the oxidation of metals , 1949 .