Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
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Chennupati Jagadish | Hark Hoe Tan | Jin Zou | Lap Van Dao | M. Gal | D. Q. Cai | Yong Kim | E. H. Li | Shu Yuan | David J. H. Cockayne | L. Dao | H. Tan | C. Jagadish | M. Gal | E. Li | J. Zou | Y. Kim | R. M. Cohen | D. Cockayne | P. T. Burke | M.C.Y. Chan | S. Yuan | D. Cai | P. Burke | M. Chan
[1] Daniel Hofstetter,et al. Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering , 1995 .
[2] Anomalous light emission from semiconductor laser material during pulsed anodization , 1995 .
[3] G. B. Anderson,et al. Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources , 1995 .
[4] A. C. Bryce,et al. Fabrication of multiple wavelength lasers in GaAs-AlGaAs structures using a one-step spatially controlled quantum-well intermixing technique , 1995, IEEE Photonics Technology Letters.
[5] E. Herbert Li,et al. Exciton optical absorption in a diffusion-induced nonsquare AlGaAs/GaAs quantum well , 1992, Other Conferences.
[6] P. Zory,et al. Characterization of thin p-clad InGaAs single-quantum-well lasers , 1995, IEEE Photonics Technology Letters.
[7] H. Craighead,et al. Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures , 1988 .
[8] Irene A. Stegun,et al. Handbook of Mathematical Functions. , 1966 .
[9] Ekenberg. Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels. , 1989, Physical review. B, Condensed matter.
[10] M. Grove,et al. Pulsed anodic oxides for III-V semiconductor device fabrication , 1994 .
[11] Emil S. Koteles,et al. High-reliability blue-shifted InGaAsP/InP lasers , 1996 .
[12] E. Li,et al. Effect of interdiffusion of quantum well infrared photodetector , 1996 .
[13] John H. Marsh,et al. Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing , 1997 .
[15] Thomas F. Krauss,et al. Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion , 1994 .
[16] S. Yu,et al. Proposed enhancement of side-mode suppression ratio in /spl lambda//4 shifted distributed feedback lasers with nonuniform diffused quantum wells , 1996, IEEE Photonics Technology Letters.
[17] J. Ralston,et al. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding , 1995, IEEE Photonics Technology Letters.
[18] Mohamed Henini,et al. Zn diffusion-induced disorder in AlAs/GaAs superlattices , 1989 .
[19] 2.4 W CW 770 nm laser arrays with nonabsorbing mirrors , 1987 .
[20] John Crank,et al. The Mathematics Of Diffusion , 1956 .
[21] J. Marsh,et al. Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering , 1992, IEEE Photonics Technology Letters.
[22] C. B. Duke,et al. Space-Charge Effects on Electron Tunneling , 1966 .
[23] Weiss,et al. Effect of interdiffusion on the subbands in an AlxGa1-xAs/GaAs single-quantum-well structure. , 1992, Physical Review B (Condensed Matter).
[24] Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing , 1992 .
[25] M. Carre,et al. Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion , 1995, IEEE Photonics Technology Letters.
[26] Chennupati Jagadish,et al. Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing , 1996 .
[27] Jin Zou,et al. Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing , 1997 .
[28] K. Alavi,et al. Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering , 1989 .
[29] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .
[30] M. Otsubo,et al. Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well , 1995 .
[31] J. Fleissner,et al. Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion , 1995, IEEE Photonics Technology Letters.
[32] L. Coldren,et al. Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering , 1995, IEEE Photonics Technology Letters.
[33] S. Murarka. Thermal oxidation of GaAs , 1975 .
[34] C. D. Thurmond,et al. GaAs Oxidation and the Ga‐As‐O Equilibrium Phase Diagram , 1980 .
[35] M. Maier,et al. Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells , 1995 .
[36] M.A. Emanuel,et al. High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size , 1996, IEEE Photonics Technology Letters.