Bi epitaxy on polar InSb(111)A/B faces

Bi thin films have been grown on InSb(111)A/B substrates using molecular beam epitaxy. We have observed different Bi atomic surface structures on polar InSb(111)A and B faces as well as thickness dependent surface structures on the A face. Bi deposited on InSb(111)B shows a (1×1) surface structure, i.e., no surface reconstruction. However, Bi on InSb(111)A shows a (2×2) structure for thicknesses less than 16 A, thereafter changing to a (1×1) structure. On both surfaces, Bi grows in a layer-by-layer growth mode with high crystallinity and sharp interfaces.

[1]  Sunglae Cho,et al.  Molecular beam epitaxial growth and structural properties of Bi1−xSbx alloy thin films on CdTe(111) substrates , 1999 .

[2]  Peter C. Searson,et al.  Structural and magneto-transport properties of electrodeposited bismuth nanowires , 1998 .

[3]  M. Dresselhaus,et al.  Magnetotransport investigations of ultrafine single-crystalline bismuth nanowire arrays , 1998 .

[4]  Sunglae Cho,et al.  Growth-mode modification of Bi on CdTe(111)A using Te monolayer deposition , 1998 .

[5]  Nakamura,et al.  Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B. , 1996, Physical review. B, Condensed matter.

[6]  Louise Olsson,et al.  InSb(1̄ 1̄ 1̄)3×1: New surface reconstruction , 1996 .

[7]  Lu,et al.  Low-temperature electrical-transport properties of single-crystal bismuth films under pressure. , 1996, Physical review. B, Condensed matter.

[8]  Hoffman,et al.  Reply to "Comment on 'Semimetal-to-semiconductor transition in bismuth thin films' " , 1995, Physical review. B, Condensed matter.

[9]  W. Moritz,et al.  A new type of reconstruction on the InSb(1̄1̄1̄) surface determined by grazing incidence X-ray diffraction , 1994 .

[10]  Karlsson,et al.  Surface electronic structure of InSb(1-bar 1-bar 1-bar)3 x 3 studied by angle-resolved photoelectron spectroscopy and scanning tunneling microscopy. , 1994, Physical review. B, Condensed matter.

[11]  Omi,et al.  Surface phase transition and interface interaction in the alpha -Sn/InSb{111} system. , 1994, Physical review. B, Condensed matter.

[12]  J. Ketterson,et al.  Molecular‐beam epitaxy growth of Bi epilayers and Bi–CdTe superlattices , 1994 .

[13]  Hoffman,et al.  Semimetal-to-semiconductor transition in bismuth thin films. , 1993, Physical review. B, Condensed matter.

[14]  Richardson,et al.  Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy. , 1993, Physical review. B, Condensed matter.

[15]  J. Ketterson,et al.  Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy , 1993 .

[16]  Weaver,et al.  Orientational ordering and domain-wall formation in Sb overlayers on GaAs(110). , 1992, Physical review. B, Condensed matter.

[17]  Nakada,et al.  Sb trimer structure of the InSb(111)B-(2 x 2) surface as determined by transmission electron diffraction. , 1991, Physical review letters.

[18]  J. H. Weaver,et al.  Empty electronic states of epitaxial Bi overlayers on InP(110): Effects of surface relaxation , 1991 .

[19]  Weaver,et al.  Long-range ordering of Sb multilayers on GaAs(110): Evolution of resonant inverse photoemission. , 1990, Physical review. B, Condensed matter.

[20]  R. Srama,et al.  Thermal stability and Schottky barrier of Sb overlayers on GaAs(110) and InP(110) , 1990 .

[21]  J. Heremans,et al.  Transmission electron microscopy studies of bismuth films , 1990 .

[22]  Weaver,et al.  Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations. , 1990, Physical review. B, Condensed matter.

[23]  R. H. Williams,et al.  Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature , 1990 .

[24]  Joyce,et al.  Growth morphology and electronic structure of the Bi/GaAs(110) interface. , 1989, Physical review. B, Condensed matter.

[25]  Mclean,et al.  Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi. , 1989, Physical review. B, Condensed matter.

[26]  Perry,et al.  Growth and characterization of epitaxial bismuth films. , 1988, Physical review. B, Condensed matter.

[27]  Mårtensson,et al.  Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy. , 1988, Physical review letters.

[28]  S. Sivananthan,et al.  Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy , 1986 .

[29]  Johnson,et al.  Model-independent structure determination of the InSb(111)2 x 2 surface with use of synchrotron x-ray diffraction. , 1985, Physical review letters.

[30]  Chadi,et al.  Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure. , 1985, Physical review. B, Condensed matter.

[31]  C. Wood,et al.  Growth of Sb and InSb by molecular‐beam epitaxy , 1981 .