700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p<sup>+</sup> gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage V<sub>BR</sub> and specific on-resistance R<sub>onS</sub> of the fabricated SiC-BGSIT were 700 V at a gate voltage V<sub>G</sub>=-12V, and 1.0 mOmegamiddotcm<sup>2</sup> at a current density J<sub>D</sub>=200A/cm<sup>2</sup> and V<sub>G</sub>=2.5V, respectively. This R<sub>onS</sub> is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs

[1]  T. Yokota,et al.  Design consideration for 2 kV SiC-SIT , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[2]  K. Tone,et al.  1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors , 2003, IEEE Electron Device Letters.

[3]  M.S. Mazzola,et al.  Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..