Comparison of semiclassical calculations to experiment for spin valve films grown on oxide surfaces

The physical properties of spin valve films grown on the surface of nano-oxide layers were studied as a function of Cu spacer layer thickness. In comparison to identical structures without the oxide surface, the films exhibited an increase in ΔR/R of 30% accompanied by a reduction of only 5% in resistance. Semiclassical calculations were preformed on these films with a close match to experiment. Assuming the oxide layer did not cause drastic changes in the properties of the other film layers, the specular reflection was changed to obtain a match with experiment. The increase in giant magnetoresistance response was achieved by increasing the specular reflection at the metal/oxide interfaces from 15% to 85%, indicating high efficiency for specular reflection at the nano-oxide interface.