论文信息 - ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

An analytical inversion charge model, ICM, based on a surface potential solution and consideration of poly-gate depletion as well as the correction of quantum mechanical effects is presented. It is continuous and accurate from weak inversion to strong inversion, including the moderate inversion region, of growing importance for low voltage/power circuits. The model is verified with extensive measured inversion charge data and applied to modeling MOSFETs down to 0.13 /spl mu/m channel length.

Chenming Hu | K. Imai | Yuhua Cheng | Kai Chen | K. Imai

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